β-Ga₂O₃ Lateral High-Permittivity Dielectric Superjunction Schottky Barrier Diode With 1.34 GW/cm² Power Figure of Merit
Author:
Affiliation:
1. Material Department, University of California at Santa Barbara, Santa Barbara, CA, USA
Funder
II-VI Foundation Block Gift Program
Air Force Office of Scientific Research
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9965979/09926082.pdf?arnumber=9926082
Reference36 articles.
1. Low Resistance Ohmic Contact on Epitaxial MOVPE Grown β-Ga2O3 and β-(AlxGa1−x)2O3 Films
2. 130 mA mm−1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts
3. High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2
4. Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²
5. Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes
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