130 mA mm−1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts-Reference-Cited by-同舟云学术

130 mA mm−1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts

Published:2021-06-22 Issue:7 Volume:14 Page:076502
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Bhattacharyya Arkka^ORCID,Roy Saurav,Ranga Praneeth^ORCID,Shoemaker Daniel,Song Yiwen,Lundh James Spencer,Choi Sukwon^ORCID,Krishnamoorthy Sriram^ORCID

Funder

II–VI foundation Block Gift Program

National Science Foundation

Air Force Office of Scientific Research

AFOSR Young Investigator Program

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/ac07ef/pdf

Reference29 articles.

1. Guest Editorial: The dawn of gallium oxide microelectronics

2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

3. Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors

4. Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage

5. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

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