Low Resistance Ohmic Contact on Epitaxial MOVPE Grown β-Ga2O3 and β-(AlxGa1−x)2O3 Films
Author:
Affiliation:
1. Agnitron Technology Inc., Chanhassen, MN, USA
2. Materials Department, University of California at Santa Barbara, Santa Barbara, CA, USA
3. Department of Electrical and Computer Engineering, The University of Utah, Salt Lake City, UT, USA
Funder
Air Force Research Laboratory (AFRL)/RQKMA
II-VI FoundationBlock Gift Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9903996/09864198.pdf?arnumber=9864198
Reference25 articles.
1. Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²
2. Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field
3. Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage
4. A review of Ga2O3materials, processing, and devices
5. Process and characterization of ohmic contacts for beta-phase gallium oxide
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