Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field-Reference-Cited by-同舟云学术

Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field

Published:2019-12-16 Issue:25 Volume:115 Page:252104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xia Zhanbo¹^ORCID,Chandrasekar Hareesh¹^ORCID,Moore Wyatt¹,Wang Caiyu¹,Lee Aidan J.²,McGlone Joe¹^ORCID,Kalarickal Nidhin Kurian¹^ORCID,Arehart Aaron¹^ORCID,Ringel Steven¹³,Yang Fengyuan²^ORCID,Rajan Siddharth¹³

Affiliation:

1. Electrical & Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA

3. Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5130669

Reference23 articles.

1. Semiconductors for high‐voltage, vertical channel field‐effect transistors

2. High performance of high-voltage 4H-SiC Schottky barrier diodes

3. High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

4. Influence of metal choice on (010) β-Ga2O3Schottky diode properties

5. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

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