Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization-Reference-Cited by-同舟云学术

Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization

Author:

Kuk Song-Hyeon¹^ORCID,Han Seungmin²,Lee Dong Hyun³,Kim Bong Ho¹^ORCID,Shim Joonsup¹^ORCID,Park Min Hyuk³,Han Jae-Hoon²,Kim Sang-Hyeon¹^ORCID

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea

2. Korea Institute of Science and Technology (KIST), Seoul, South Korea

3. Department of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul, Republic of Korea

Funder

National Research Foundation of Korea

Brain Korea 21 Four

Korea Advanced Institute of Science and Technology

IC Design Education Center

Korea Institute of Science and Technology (KIST) Institution Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

Reference26 articles.

3. 14 nm ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications;krivokapic;IEDM Tech Dig,2017

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. A Compact Model of FTJ Covering the Trapping/De-trapping Charateristics;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27