A Compact Model of FTJ Covering the Trapping/De-trapping Charateristics-Reference-Cited by-同舟云学术

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A Compact Model of FTJ Covering the Trapping/De-trapping Charateristics

Published:2023-09-27 Issue: Volume: Page:
ISSN:
Container-title:2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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Author:

Feng Ning¹,Ji Ning¹,Zhang Fangxing¹,Li Yu¹,Cai Puyang¹,Li Hao¹,Zhang Lining¹,Wang Runsheng²,Huang Ru²

Affiliation:

1. Peking University,School of Electronic and Computer Engineering,Shenzhen,China

2. Peking University,School of Integrated Circuits,Beijing,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10319472/10319477/10319617.pdf?arnumber=10319617

Reference12 articles.

1. Deep insights into the Interplay of Polarization Switching, Charge Trapping, and Soft Breakdown in Metal-Ferroelectric-Metal-Insulator-Semiconductor Structure: Experiment and Modeling

2. A dynamic current hysteresis model for IGZO-TFT

3. Ferroelectric HfO2 Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process

4. A Physics-Based Dynamic Compact Model of Ferroelectric Tunnel Junctions

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