Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs-Reference-Cited by-同舟云学术

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Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

Published:2018-12 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Electron Devices Meeting (IEDM)
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Author:

Lee M. H.,Chen K.-T.,Liao C.-Y.,Gu S.-S.,Siang G.-Y.,Chou Y.-C.,Chen H.-Y.,Le J.,Hong R.-C.,Wang Z.-Y.,Chen S.-Y.,Chen P.-G.,Tang M.,Lin Y.-D.,Lee H.-Y.,Li K.-S.,Liu C. W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614510.pdf?arnumber=8614510

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pushing the Boundaries: Design and Simulation Approach of Negative Capacitance Nanosheet FETs with Ferroelectric and Dielectric Spacers at the Sub-3 nm Technology Node for Analog/RF/Mixed Signal Applications;ACS Applied Electronic Materials;2024-05-09

2. SiGe/Si Superlattice Ferroelectric HfZrO₂ ΩFET and CMOS Inverter With SS_min,n = 62.4 mV/dec, I_ON/I_OFF > 1.0 × 10⁷, and Voltage Gain = 111.4 V/V;IEEE Electron Device Letters;2024-02

3. Passive Voltage Amplification in FE-FE-DE Heterostructure;IEEE Access;2024

4. Negative Capacitance Field-Effect Transistor (NCFET): Strong Beyond CMOS Device;Springer Tracts in Electrical and Electronics Engineering;2024

5. Analysis of Negative to Positive Differential Conductance Transition in NCFET and Guidelines for Analog Circuit Designing;Nanoscale Field Effect Transistors: Emerging Applications;2023-12-19

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