Examination of Ferroelectric FET for “Cold” Nonvolatile Memory-Reference-Cited by-同舟云学术

Examination of Ferroelectric FET for “Cold” Nonvolatile Memory

Published:2023-08 Issue:8 Volume:70 Page:4122-4127
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kuk Song-Hyeon¹^ORCID,Han Seung-Min²,Kim Bong Ho¹^ORCID,Kim Joon Pyo¹,Kim Seong-Kwang¹,Ahn Seung-Yeop¹,Park Min Hyuk³^ORCID,Han Jae-Hoon²,Kim Sang-Hyeon¹^ORCID

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea

2. Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea

3. Department of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul, Republic of Korea

Funder

National Research Foundation of Korea (NRF), South Korea

BrainKorea21 FOUR, Korea Advanced Institute of Science and Technology

IC Design Education Center

Korea Institute of Science and Technology (KIST) Institutional Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10194493/10149048.pdf?arnumber=10149048

Reference33 articles.

1. Temperature and frequency dependence of the coercive field of 0.71PbMb1/3Nb2/3O3–0.29PbTiO3 relaxor-based ferroelectric single crystal

2. Intrinsic Ferroelectric Coercive Field

3. Direct observation of interface charge behaviors in FeFET by quasi-static split C–V and Hall techniques: Revealing FeFET operation;toprasertpong;IEDM Tech Dig,2019

4. An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode

5. Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance