A new approach of modeling the ultra-short channel ballistic GAA MOSFETs-Reference-Cited by-同舟云学术

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A new approach of modeling the ultra-short channel ballistic GAA MOSFETs

Published:2022-09-23 Issue: Volume: Page:
ISSN:
Container-title:2022 2nd International Conference on Computer Science, Electronic Information Engineering and Intelligent Control Technology (CEI)
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Author:

Cheng He¹,Zhang Chao¹,Xie Chuang¹,Liu Tiefneg¹,Yang Zhijia¹,Zhang Zhipeng¹

Affiliation:

1. Chinese Academy of Sciences,Key Laboratory of Networked Control Systems,Shenyang,Liaoning,China,110016

Funder

Chinese Academy of Sciences

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9950049/9948458/09950191.pdf?arnumber=9950191

Reference9 articles.

1. Quasi-Compact Model of Direct Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs by Wavelet Transform

2. Comparing bulk-Si FinFET and gate-all-around FETs for the 5 nm technology node

3. Analytic Compact Model of Ballistic and Quasi-Ballistic Cylindrical Gate-All-Around Metal–Oxide–Semiconductor Field Effect Transistors Including Two Subbands

4. Analytic compact model of ballistic and quasi-ballistic transport for cylindrical gate-all-around MOSFET including drain-induced barrier lowering effect

5. A unified short-channel compact model for cylindrical surrounding-gate MOSFET

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