Author:
Cousin Bastien,Reyboz Marina,Rozeau Olivier,Jaud Marie-Anne,Ernst Thomas,Jomaah Jalal
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. The International Technology Roadmap for Semiconductors. .
2. Multiple-gate SOI MOSFETs: device design guidelines;Park;IEEE Trans Electron Dev,2002
3. Multiple-gate SOI MOSFETs;Colinge;Solid State Electron,2004
4. Ernst T, Duraffourg L, Dupré C, Bernard E, Andreucci P, Bécu S et al. Novel Si-based nanowire devices: will they serve ultimate MOSFETs scaling or ultimate hybrid integration? IEDM Technol Dig; 2008.
5. Tachi K, Cassé M, Jang D, Dupré C, Hubert A, Vulliet N et al. Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires. IEDM Technol Dig; 2009.
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