Analytic Compact Model of Ballistic and Quasi-Ballistic Cylindrical Gate-All-Around Metal–Oxide–Semiconductor Field Effect Transistors Including Two Subbands
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference30 articles.
1. Theoretical Study of Carrier Transport in Silicon Nanowire Transistors Based on the Multisubband Boltzmann Transport Equation
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3. Modeling of Nanoscale Gate-All-Around MOSFETs
4. Continuous Analytic I–V Model for Surrounding-Gate MOSFETs
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1. A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs;Nanomaterials;2022-09-28
2. A new approach of modeling the ultra-short channel ballistic GAA MOSFETs;2022 2nd International Conference on Computer Science, Electronic Information Engineering and Intelligent Control Technology (CEI);2022-09-23
3. Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling;Japanese Journal of Applied Physics;2020-06-25
4. A compact model for gate tunneling currents in undoped cylindrical surrounding-gate metal-oxide-semiconductor field-effect transistors;Microelectronic Engineering;2019-08
5. Compact Model of Short-channel Cylindrical ballistic Gate-All-Around MOSFET Including the Source-to-drain Tunneling;Journal of Physics: Conference Series;2018-05
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