Oxides grown on textured single-crystal silicon-dependence on process and application of EEPROMs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/1800/00047761.pdf?arnumber=47761
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characteristics of Tunneling Nitride Grown by Electron Cyclotron Resonance Nitrogen-Plasma Nitridation and Its Application to Low-Voltage Electrical Erasable-Programmable Read-Only Memory;Japanese Journal of Applied Physics;2001-04-30
2. The characteristics of tunnel oxides grown on textured silicon surface with a simple and reliable process;IEEE Transactions on Electron Devices;1999
3. A new simple and reliable method to form a textured Si surface for the fabrication of a tunnel oxide film;IEEE Electron Device Letters;1998-05
4. Effect of silicon substrate microroughness on gate oxide quality;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-09
5. Excellent Emission Characteristics of Tunneling Oxides Formed Using Ultrathin Silicon Films for Flash Memory Devices;Japanese Journal of Applied Physics;1996-06-15
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