Excellent Emission Characteristics of Tunneling Oxides Formed Using Ultrathin Silicon Films for Flash Memory Devices
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Published:1996-06-15
Issue:Part 1, No. 6A
Volume:35
Page:3369-3373
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Wang Ping-Wei,Ku Tzu-Kun,Su Huan-Ping,Hong Gary,Cheng Huang-Chung
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering