GaN Power ICs: Reviewing Strengths, Gaps, and Future Directions-Reference-Cited by-同舟云学术

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GaN Power ICs: Reviewing Strengths, Gaps, and Future Directions

Published:2020-12-12 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
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Author:

Trescases O.,Murray S. K.,Jiang W. L.,Zaman M. S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09371918.pdf?arnumber=9371918

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monolithic Control and Drive Blocks of AlGaN/GaN MIS-HEMTs for DC-DC Buck Converters;IEEE Transactions on Electron Devices;2024-09

2. A novel design of hysteretic comparator circuit towards GaN-based power IC;Microelectronics Journal;2024-09

3. A 400 V Dual-Phase Series-Capacitor Buck Converter GaN IC With Integrated Closed-Loop Control;IEEE Transactions on Power Electronics;2024-08

4. A Monolithic GaN Power Stage With Common-Mode Transient Immunity and Negative Voltage Operation Design for High-Frequency Power Converters;IEEE Transactions on Power Electronics;2024-07

5. Vertical GaN Transistor with Quasi-Monolithically Integrated HEMT Gate Driver and Sense-CAVET for Current Monitoring;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

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