A novel design of hysteretic comparator circuit towards GaN-based power IC
Author:
Funder
National Natural Science Foundation of China
Natural Science Foundation of Shanghai Municipality
Publisher
Elsevier BV
Reference24 articles.
1. Fully integrated GaN-on-Silicon gate driver and GaN switch with temperature-compensated fast turn-on technique for achieving switching frequency of 50 MHz and slew rate of 118.3 V/ns;Kao;IEEE J. Solid State Circ.,2021
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3. High-temperature performance of AlGaN/GaN HFETs on SiC substrates;Gaska;IEEE Electron. Device Lett.,1997
4. Gate and barrier layer design of E-mode GaN HEMT with p-GaN gate structure;Li;2019 20th International Conference on Electronic Packaging Technology(ICEPT),2019
5. 25.2 A 10MHz 3-to-40V VIN tri-slope gate driving GaN DC-DC converter with 40.5dBμV spurious noise compression and 79.3% ringing suppression for automotive applications;Ke;2017 IEEE International Solid-State Circuits Conference (ISSCC),2017
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