Optimal Structure of Lanthanum-Doped Hafnium Oxide: First-Principle Modeling-Reference-Cited by-同舟云学术

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Optimal Structure of Lanthanum-Doped Hafnium Oxide: First-Principle Modeling

Published:2022-06-30 Issue: Volume: Page:
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Container-title:2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM)
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Author:

Kovzik Valeriya M.¹,Perevalov Timofey V.²,Islamov Damir R.²

Affiliation:

1. Novosibirsk State University Rzhanov Institute of Semiconductor,Physics of the Siberian Branch of the RAS,Novosibirsk,Russia

2. Rzhanov Institute of Semiconductor,Physics of the Siberian Branch of the RAS,Novosibirsk,Russia

Funder

Russian Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9855012/9854868/09855173.pdf?arnumber=9855173

Reference14 articles.

1. Dopants Promoting Ferroelectricity in Hafnia: Insights from a comprehensive Chemical Space Exploration

2. The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films

3. Advanced capabilities for materials modelling with Quantum ESPRESSO

4. Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

5. Structure, chemistry and luminescence properties of dielectric La Hf1-O films

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of lanthanum doping on the electronic structure of oxygen vacancies in hafnium oxide;Computational Materials Science;2024-01

2. Oxygen Vacancies as Traps Responsible for La-Doped Hf_0.5Zr_0.5O₂ Charge Transport;The Journal of Physical Chemistry C;2023-07-20

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