Monolithic 3D IC vs. TSV-based 3D IC in 14nm FinFET technology-Reference-Cited by-同舟云学术

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Monolithic 3D IC vs. TSV-based 3D IC in 14nm FinFET technology

Published:2016-10 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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Author:

Samal Sandeep Kumar,Nayak Deepak,Ichihashi Motoi,Banna Srinivasa,Lim Sung Kyu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7792516/7804370/07804405.pdf?arnumber=7804405

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TEFLON: Thermally Efficient Dataflow-aware 3D NoC for Accelerating CNN Inferencing on Manycore PIM Architectures;ACM Transactions on Embedded Computing Systems;2024-08-14

2. Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors;Nature Nanotechnology;2024-07

3. Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration;IEEE Transactions on Electron Devices;2024-01

4. Modeling and Design of Dual-Purpose MIV in Monolithic 3D IC;IEEE Access;2024

5. Construction of All Multilayer Monolithic RSMTs and Its Application to Monolithic 3D IC Routing;ACM Transactions on Design Automation of Electronic Systems;2023-12-18

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