Performance Analysis of DMG-GOS Junctionless FinFET with high-k Spacer-Reference-Cited by-同舟云学术

Performance Analysis of DMG-GOS Junctionless FinFET with high-k Spacer

Published:2022-11-04 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Silchar Subsection Conference (SILCON)
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Author:

Kumar Appikatla Phani¹,Lorenzo Rohit¹

Affiliation:

1. VIT-AP University,School of Electronics Engineering,Amaravati,Andhra Pradesh,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10028779/10028780/10028902.pdf?arnumber=10028902

Reference29 articles.

1. A novel bottom-spacer ground-plane (BSGP) FinFET for improved logic and analog/RF performance

2. Dual-material gate (DMG) field effect transistor

3. A Comprehensive Analysis of Junctionless Tri-Gate (TG) FinFET Towards Low-Power and High-Frequency Applications at 5-nm Gate Length

4. Design and Deep Insights into Sub-10 nm Spacer Engineered Junctionless FinFET for Nanoscale Applications;sreenivasulu;ECS J Solid State Sci Technol,2021

5. Analytical modeling and simulation of multigate FinFET devices and the impact of high-k dielectrics on short channel effects (SCEs)

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