Effect of Work Function Modulation on Switching Current Ratio For A Dual Metal Gate Junctionless FinFET(DMG-JL FinFET)-Reference-Cited by-同舟云学术

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Effect of Work Function Modulation on Switching Current Ratio For A Dual Metal Gate Junctionless FinFET(DMG-JL FinFET)

Published:2023-12-14 Issue: Volume: Page:1-5
ISSN:
Container-title:2023 International Conference on Next Generation Electronics (NEleX)
language:
Short-container-title:

Author:

Vijaya Pidaparthy¹,Lorenzo Rohit¹

Affiliation:

1. School of Electronics Engineering VIT-AP University,Amaravati,Andhra pradesh,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10420829/10420849/10421223.pdf?arnumber=10421223

Reference19 articles.

1. Comparison of the scaling characteristics of nanoscale silicon N-channel multiple-gate MOSFETs

2. Scaling theory for double-gate SOI MOSFET's

3. Highly suppressed short-channel effects in ultrathin SOI n-MOSFETs

4. FinFETs: From Devices to Architectures

5. Variation Study of the Planar Ground-Plane Bulk MOSFET, SOI FinFET, and Trigate Bulk MOSFET Designs

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