A Comprehensive Analysis of Junctionless Tri-Gate (TG) FinFET Towards Low-Power and High-Frequency Applications at 5-nm Gate Length
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-021-00987-8.pdf
Reference41 articles.
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5. Sachid AB, Chen M, Hu C (2017) Bulk FinFET with low-k spacers for continued scaling. IEEE Trans Electron Devices 64(4):1861–1864
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