A Comprehensive Analysis of Junctionless Tri-Gate (TG) FinFET Towards Low-Power and High-Frequency Applications at 5-nm Gate Length
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-021-00987-8.pdf
Reference41 articles.
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4. Nowak EJ, Aller I, Ludwig T, Keunwoo Kim, Joshi RV, Ching-te Chuang, Bernstein K, Puri R (2004) Turning silicon on its edge double gate CMOS/FinFET technology. IEEE Circ Devices Mag 20(1):20–31
5. Sachid AB, Chen M, Hu C (2017) Bulk FinFET with low-k spacers for continued scaling. IEEE Trans Electron Devices 64(4):1861–1864
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