Ultra thin oxide reliability: effects of gate doping concentration and poly-Si/SiO/sub 2/ interface stress relaxation-Reference-Cited by-同舟云学术

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Ultra thin oxide reliability: effects of gate doping concentration and poly-Si/SiO/sub 2/ interface stress relaxation

Published:1996 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of International Reliability Physics Symposium RELPHY-96
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Author:

Wristers D.,Wang H.H.,Wolf I.D.,Han L.K.,Kwong D.L.,Fulford J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/3523/10603/00492064.pdf?arnumber=492064

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extraction of band diagram parameters from Fowler–Nordheim model in silicon dioxide;Journal of Non-Crystalline Solids;2001-02

2. The influence of post annealing on oxide charge-to-breakdown in tungsten polycide gate technology;Solid-State Electronics;2000-01

3. Raman and Spectroscopic Ellipsometry Studies of P-Doped Poly-Si;MRS Proceedings;1998

4. Dependence on gate work function of oxide charging, defect generation, and hole currents in metal–oxide–semiconductor structures;Journal of Applied Physics;1997-04

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