Author:
Sorbier J.P.,Plossu C.,Croci S.,Boivin Ph.,Renard S.,Harrabech N.,Bouchakour R.
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures
2. Volt-current characteristics for tunneling through insulating films
3. P. Hesto, Instabilities in Silicon Devices, vol. 1, Elsevier, Amsterdam, 1986
4. B. Balland, G. Barbottin, Instabilities in Silicon Devices, vol. 2, Elsevier, Amsterdam, 1986
5. Positive charge and interface state creation at the Si‐SiO2interface during low‐fluence and high‐field electron injections
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献