Author:
Lee Byunghak,Kim Sangcheol,Kim Jongoh,Om Jaechul
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. The effects of fluorine in silicon dioxide gate dielectrics;Wright;IEEE Trans. Electron. Dev.,1989
2. Mitani Y, Satake H, Nakasaki Y, Toriumi A, Reexamination of fluorine incorporation into SiO2 significant improvement of charge-to-breakdown distribution tail, IEEE IRPS 1999;93–8
3. Effect of fluorine in chemical-vapor-deposited tungsten silicide film on electrical breakdown of SiO2 film;Shioya;J. Appl. Phys.,1987
4. Tungsten silicide/n+ polysilicon technology for VLSI;Deal,1985
5. Wristers D, Wang HH, Wolf ID, Han LK, Kwong DL, Fulford J, Ultra thin oxide reliability: effects of gate doping concentration and poly-Si/SiO2 interface stress relaxation, IEEE IRPS 1996;77–83
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