Effect of fluorine in chemical‐vapor‐deposited tungsten silicide film on electrical breakdown of SiO2film
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338336
Reference8 articles.
1. A pure metal polycide metal-oxide-semiconductor gate technology
2. A new tungsten gate process for VLSI applications
3. Film properties of MoSi2and their application to self-aligned MoSi2gate MOSFET
4. Properties of Sputtered Tungsten Silicide for MOS Integrated Circuit Applications
5. Composite silicide gate electrodes—Interconnections for VLSI device technologies
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1. Thermal Atomic Layer Etching of Silica and Alumina Thin Films Using Trimethylaluminum with Hydrogen Fluoride or Fluoroform;ACS Applied Materials & Interfaces;2018-09-04
2. Electrical properties improvement of high-k HfO2 films by combination of C4F8 dual-frequency capacitively coupled plasmas treatment with thermal annealing;Applied Surface Science;2014-08
3. Role of high-frequency power in C4F8dual-frequency capacitively coupled plasmas treating high-kHfO2films;Journal of Physics D: Applied Physics;2013-10-07
4. Silicon Device Processing;Materials Science and Technology;2013-02-15
5. Low Temperature Chemical Vapor Deposition of Silicon-rich Tungsten Silicide Films from Tungsten Hexafluoride - Disilane Pre-activated Mixtures;INT J CHEM REACT ENG;2012
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