Raman and Spectroscopic Ellipsometry Studies of P-Doped Poly-Si

Abstract

ABSTRACTPhosphorus-doped poly-Si films were studied with Raman spectroscopy and spectroscopic ellipsometry. We determine strain and grain size and compare with a structural analysis using plan-view transmission electron microscopy and atomic force microscopy. We analyze the derivatives of our ellipsometry data (peak shifts and broadenings) using analytical lineshapes, which are affected by grain size, film thickness, doping, and inhomogeneity, but only minimally by macroscopic biaxial strain.