Thickness dependence of infrared lattice absorption and excitonic absorption in ZnO layers on Si and SiO2 grown by atomic layer deposition-Reference-Cited by-同舟云学术

Thickness dependence of infrared lattice absorption and excitonic absorption in ZnO layers on Si and SiO2 grown by atomic layer deposition

Published:2020-07 Issue:4 Volume:38 Page:042201
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Samarasingha Nuwanjula S.¹,Zollner Stefan¹^ORCID,Pal Dipayan²,Singh Rinki³,Chattopadhyay Sudeshna²³⁴^ORCID

Affiliation:

1. Department of Physics, New Mexico State University, MSC 3D, P.O. Box 30001, Las Cruces, New Mexico 88003

2. Discipline of Physics, Indian Institute of Technology Indore, Indore 453552, India

3. Discipline of Biosciences and Biomedical Engineering, Indian Institute of Technology Indore, Indore 453552, India

4. Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552, India

Funder

Division of Materials Research

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/am-pdf/10.1116/6.0000184

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