Process-in-Memory Using a Magnetic-Tunnel-Junction Synapse and a Neuron Based on a Carbon Nanotube Field-Effect Transistor-Reference-Cited by-同舟云学术

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Process-in-Memory Using a Magnetic-Tunnel-Junction Synapse and a Neuron Based on a Carbon Nanotube Field-Effect Transistor

Published:2019 Issue: Volume:10 Page:1-5
ISSN:1949-307X
Container-title:IEEE Magnetics Letters
language:
Short-container-title:IEEE Magn. Lett.

Author:

Amirany Abdolah^ORCID,Moaiyeri Mohammad Hossein^ORCID,Jafari Kian^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5165412/8566206/08930309.pdf?arnumber=8930309

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A reliable non‐volatile in‐memory computing associative memory based on spintronic neurons and synapses;Engineering Reports;2024-04-24

2. A High Throughput In-MRAM-Computing Scheme Using Hybrid p-SOT-MTJ/GAA-CNTFET;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-02

3. A Multiplexer-Based High-Capacity Spintronic Synapse;IEEE Magnetics Letters;2024

4. A High-Accuracy and Low-Power Emerging Technology-Based Associative Memory;IEEE Transactions on Nanotechnology;2024

5. Nonvolatile Latch Designs With Node-Upset Tolerance and Recovery Using Magnetic Tunnel Junctions and CMOS;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2024-01

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