Experimental Analysis of HfO<sub>2/X</sub> ReRAM devices by the Capacitance Measurements-Reference-Cited by-同舟云学术

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Experimental Analysis of HfO_2/X ReRAM devices by the Capacitance Measurements

Published:2023-07-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Latin American Electron Devices Conference (LAEDC)
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Author:

Costa Fernando J.¹,Zeinati Aseel²,Trevisoli Renan³,Misra D.²,Doria Rodrigo T.⁴

Affiliation:

1. NJIT,Centro Universitário FEI São Bernardo do Campo,Electrical Engineering Department,Brazil

2. New Jersey Institute of Technology, NJIT,Electrical and Computer Engineering Department,Newark,USA

3. Pontifícia Universidade Católica de São Paulo, PUC-SP Insper Instituto de Ensino e Pesquisa,São Paulo,Brazil

4. Centro Universitário FEI,Electrical Engineering Department,São Bernardo do Campo,Brazil

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10209097/10208282/10209123.pdf?arnumber=10209123

Reference20 articles.

1. High-Performance MIM Capacitors for a Secondary Power Supply Application

2. Characterization of Ultra Thin Oxynitride Formed by Radical Nitridation with Slot Plane Antenna Plasma

3. A high-density MIM capacitor (13 fF/?m2) using ALD HfO2 dielectrics;yu;IEEE Electron Device Letters,2003

4. Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors

5. Categorization of Multilevel-Cell Storage-Class Memory: An RRAM Example

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