Improved Signal Integrity at 64 Gbps in a 130-nm SiGe Optical Receiver With Through-Silicon Vias-Reference-Cited by-同舟云学术

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Improved Signal Integrity at 64 Gbps in a 130-nm SiGe Optical Receiver With Through-Silicon Vias

Published:2022-10-16 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Movaghar Ghazal¹,Liu Junqian¹,Dalton James¹,Valenzuela Luis A.¹,Schow Clint L.¹,Buckwalter James F.¹

Affiliation:

1. University of California,Dept. of Elec. and Comp. Eng,Santa Barbara

Funder

Advanced Research Projects Agency

U.S. Department of Energy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051734.pdf?arnumber=10051734

Reference10 articles.

1. BiCMOS Through-Silicon Via (TSV) Signal Transition at 240/300 GHz for MM-Wave & Sub-THz Packaging and Heterogeneous Integration

2. RF Model and Verification of Through-Silicon Vias in Fully Integrated SiGe Power Amplifier

3. A 108-Gbps, 162-mW Cherry-Hooper Transimpedance Amplifier

4. Modeling and Characterization of Through-Silicon-Vias (TSVs) in Radio Frequency Regime in an Active Interposer Technology

5. Electrical Modeling and Characterization of Through Silicon via for Three-Dimensional ICs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

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