Switchable NAND and NOR Logic Computing in Single Triple-Gate Monolayer MoS2 n-FET-Reference-Cited by-同舟云学术

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Switchable NAND and NOR Logic Computing in Single Triple-Gate Monolayer MoS2 n-FET

Published:2020-12-12 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
language:
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Author:

Chung Yun-Yan,Cheng Chao-Ching,Kang Bo-Kai,Chueh Wei-Chen,Wang Shih-Yun,Chou Chen-Han,Hung Terry Y.T.,Wang Shin-Yuan,Chang Wen-Hao,Li Lain-Jong,Chien Chao-Hsin

Funder

Ministry of Science and Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09372072.pdf?arnumber=9372072

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. J-MISFET Hybrid Dual-Gate Switching Device for Multifunctional Optoelectronic Logic Gate Applications;ACS Nano;2024-04-17

2. Dielectric Material Technologies for 2-D Semiconductor Transistor Scaling;IEEE Transactions on Electron Devices;2023-04

3. Next-Generation Hybrid RF Front-End with MoS2-FET Supply Management Circuit, CNT-FET Amplifiers, and Graphene Thin-Film Antennas;Electronics;2022-11-12

4. Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications;npj 2D Materials and Applications;2022-07-08

5. Transistors and logic circuits enabled by 2D transition metal dichalcogenides: a state-of-the-art survey;Journal of Materials Chemistry C;2022

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