Transistors and logic circuits enabled by 2D transition metal dichalcogenides: a state-of-the-art survey-Reference-Cited by-同舟云学术

Transistors and logic circuits enabled by 2D transition metal dichalcogenides: a state-of-the-art survey

Published:2022 Issue:45 Volume:10 Page:17002-17026
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Qian Fangsheng¹,Bu Xiaobo¹,Wang Junjie²,Mao Jing-Yu³,Han Su-Ting²^ORCID,Zhou Ye¹^ORCID

Affiliation:

1. Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China

2. College of Electronics and Information Engineering, Shenzhen 518060, P. R. China

3. Department of Physics, National University of Singapore, Singapore, 117542, Singapore

Abstract

The promising roadmap for boosting the performance of TMD FETs, circuitry applications, perspective of the computing scheme and challenges of current integration technologies have been reviewed.

Funder

National Natural Science Foundation of China

Science, Technology and Innovation Commission of Shenzhen Municipality

Shenzhen University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC00964A

Reference201 articles.

1. Defect‐Engineered Atomically Thin MoS 2 Homogeneous Electronics for Logic Inverters

2. High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors

3. Metrology for the next generation of semiconductor devices

4. The era of hyper-scaling in electronics

5. X.Huang , C.Liu , Z.Tang , S.Zeng , L.Liu , X.Hou , H.Chen , J.Li , Y.-G.Jiang , D. W.Zhang and P.Zhou , presented in part at the 2020 IEEE International Electron Devices Meeting (IEDM), 2020

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Schottky-barrier-free contacts with Janus WSSe 2D semiconductor using surface-engineered MXenes;Surfaces and Interfaces;2024-10

2. Reconfigurable Vertical Phototransistor with MoTe₂ Homojunction for High-Speed Rectifier and Multivalued Logical Circuits;ACS Nano;2024-08-15

3. Inkjet-Printed, High-Performance MoS₂ Transistors and Unipolar Logic Electronics;ACS Applied Materials & Interfaces;2024-07-31

4. Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer;npj 2D Materials and Applications;2024-03-27

5. Bipolar Resistive Switching in 2D MoSe₂ Grown by Atmospheric Pressure Chemical Vapor Deposition;ACS Applied Materials & Interfaces;2023-12-19