First Demonstration of Ultrafast Laser Annealed Monolithic 3D Gate-All-Around CMOS Logic and FeFET Memory with Near-Memory-Computing Macro-Reference-Cited by-同舟云学术

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First Demonstration of Ultrafast Laser Annealed Monolithic 3D Gate-All-Around CMOS Logic and FeFET Memory with Near-Memory-Computing Macro

Published:2020-12-12 Issue: Volume: Page:
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Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
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Author:

Hsueh Fu-Kuo,Hung Je-Min,Huang Sheng-Po,Huang Yen-Hsiang,Xue Cheng-Xin,Shen Chang-Hong,Shieh Jia-Min,Chiu Wen-Cheng,Lin Chao-Cheng,Chen Bo-Yuan,Liu Szu-Ching,Chen Shih-Wei,Niou Deng-Yan,Huang Wen-Hsien,Li Kai-Shin,Lin Kun-Kin,Chang Da-Chiang,Chen Kun-Ming,Huang Guo-Wei,Pan Ci-Ling,Chang Meng-Fan,Hu Chenming,Yeh Wen-Kuan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09371892.pdf?arnumber=9371892

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ferroelectric FET Nonvolatile Sense-Amplifier-Based Flip-Flops for Low Voltage Operation;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-01

2. 3-D Logic Circuit Design-Oriented Electrothermal Modeling of Vertical Junctionless Nanowire FETs;IEEE Journal on Exploratory Solid-State Computational Devices and Circuits;2023-12

3. Nanoscale Thermal Transport in Vertical Gate-All-Around Junctionless Nanowire Transistors—Part I: Experimental Methods;IEEE Transactions on Electron Devices;2023-12

4. Wurtzite and fluorite ferroelectric materials for electronic memory;Nature Nanotechnology;2023-04-27

5. Ferroelectric Memory;Encyclopedia of Materials: Electronics;2023

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