Perimeter and Area Components in the ${I}$ – ${V}$ Curves of 4H-SiC Vertical p+-i-n Diode With Al+ Ion-Implanted Emitters-Reference-Cited by-同舟云学术

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Perimeter and Area Components in the ${I}$ – ${V}$ Curves of 4H-SiC Vertical p+-i-n Diode With Al+ Ion-Implanted Emitters

Published:2018-02 Issue:2 Volume:65 Page:629-635
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nipoti Roberta^ORCID,Puzzanghera Maurizio^ORCID,Sozzi Giovanna^ORCID,Menozzi Roberto^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8263417/08219361.pdf?arnumber=8219361

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law;IEEE Access;2024

2. Direct barrier evaluation method for SiC devices with junction barrier Schottky structures demonstrated with quasi-continuous spacing variation;AIP Advances;2022-08-01

3. An Efficient 4H-SiC Photodiode for UV Sensing Applications;Electronics;2021-10-15

4. OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup;IEEE Transactions on Electron Devices;2021-07

5. Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs;Microelectronics Reliability;2020-10

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