Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law-Reference-Cited by-同舟云学术

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Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law

Published:2024 Issue: Volume:12 Page:74230-74238
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Sozzi Giovanna¹^ORCID,Sapienza Sergio²^ORCID,Chiorboli Giovanni¹^ORCID,Vines Lasse³,Hallén Anders⁴^ORCID,Nipoti Roberta²^ORCID

Affiliation:

1. Department of Engineering and Architecture, Università di Parma, Parma, Italy

2. CNR-IMM of Bologna, Bologna, Italy

3. Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, Oslo, Norway

4. School of EECS, KTH Royal Institute of Technology, Kista, Stockholm, Sweden

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/6287639/10380310/10538275.pdf?arnumber=10538275

Reference39 articles.

1. Fundamentals of Power Semiconductor Devices

2. Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges

3. A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications

4. Carrier lifetime and breakdown phenomena in SiC power device material

5. Defect engineering in SiC technology for high-voltage power devices

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