Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs-Reference-Cited by-同舟云学术

Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs

Published:2020-10 Issue: Volume:113 Page:113937
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Sapienza S.,Sozzi G.,Santoro D.,Cova P.,Delmonte N.,Verrini G.,Chiorboli G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Review on SiC-MOSFET devices and associated gate drivers;Alves,2018

2. Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling;Bonyadi,2014

3. Microelectronics reliability body diode reliability investigation of SiC power MOSFETs;Fayyaz;Microelectron. Reliab.,2016

4. Switching performance of a SiC MOSFET body diode and SiC schottky diodes at different temperatures;Ahmed,2017

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1. Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law;IEEE Access;2024

2. A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development;IET Power Electronics;2023-05-17

3. Dynamic performance of 6.5 kV SiC MOSFET body diodes and anti-parallel Schottky barrier diodes;Journal of Power Electronics;2023-03-29

4. Multilevel view of charge transport in oCVD polymers;Synthetic Metals;2023-03

5. OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup;IEEE Transactions on Electron Devices;2021-07