OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9462946/09447195.pdf?arnumber=9447195
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Bidirectional Six-Pack SiC Boost–Buck Converter Using Droop Control in DC Nano-Grid;Sensors;2023-10-27
2. Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation;Materials Science in Semiconductor Processing;2023-01
3. An insight into optical beam induced current microscopy: Concepts and applications;Microscopy Research and Technique;2022-08-03
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