Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Reference20 articles.
1. Kawahara, K., Hino, S., Sadamatsu, K., et al.: 2017 6.5kV schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module[C], 29th International Symposium on Power Semiconductor Devices and IC’s (ISPSD), pp. 41–44. IEEE, New Jersey, USA (2017)
2. Sabri, S., Brunt, E.V., Barkley, A., et al.: 2017 New generation 6.5kV SiC power MOSFET[C] IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), pp. 246–250. IEEE. New Jersey, USA (2017)
3. Pulvirenti, M., Sciacca, A.G., Salvo, L., et al.: Body Diode Reverse Recovery Effects on SiC MOSFET Half-Bridge Converters[C]// 2020 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 2871–2877. IEEE. New Jersey, USA (2020)
4. Yujie DU, Cui LI, Sun S, et al. Influence of Distributed Capacitance on Switching Characteristics of 6500V SiC MOSFET[C]// SSLChina: IFWS. 2020.
5. SUN Lijing, ZHANG Lei, SONG Zhenhao. Analysis and Suppression of Turn-on Current Spike of SiC MOSFET[J]. Power Electronics. 2020.