Influence of Distributed Capacitance on Switching Characteristics of 6500V SiC MOSFET-Reference-Cited by-同舟云学术

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Influence of Distributed Capacitance on Switching Characteristics of 6500V SiC MOSFET

Published:2020-11-23 Issue: Volume: Page:
ISSN:
Container-title:2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
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Author:

Yujie DU¹,Cui LI¹,Shuai SUN¹,Xinling TANG¹,Fei YANG¹,Junmin WU¹

Affiliation:

1. Global Energy Interconnection Research Institute Co.,State Key Laboratory of Advanced Power Transmission Technology,Beijing,China,102209

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9308121/9308663/09308722.pdf?arnumber=9308722

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Analysis of Switching Effects from External Anti-Parallel 10 kV JBS Diode;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

2. Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver;2023 IEEE 7th Conference on Energy Internet and Energy System Integration (EI2);2023-12-15

3. Dynamic performance of 6.5 kV SiC MOSFET body diodes and anti-parallel Schottky barrier diodes;Journal of Power Electronics;2023-03-29

4. Analysis and Suppression of 6.5kV SiC MOSFET Turn-on Current Overshoot;2021 IEEE 5th Conference on Energy Internet and Energy System Integration (EI2);2021-10-22

5. 15kV Press Pack SiC IGBT;2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2021-08-25

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