Body Diode Reverse Recovery Effects on SiC MOSFET Half-Bridge Converters-Reference-Cited by-同舟云学术

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Body Diode Reverse Recovery Effects on SiC MOSFET Half-Bridge Converters

Published:2020-10-11 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Pulvirenti Mario,Sciacca Angelo G.,Salvo Luciano,Nania Massimo,Scelba Giacomo,Scarcella Giuseppe

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9235288/9235325/09236330.pdf?arnumber=9236330

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiC superjunction MOSFET with Schottky diode for improving short-circuit and reverse recovery ruggedness;Micro and Nanostructures;2024-07

2. Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions;Energies;2024-05-30

3. Comprehensive Analysis of Switching Effects from External Anti-Parallel 10 kV JBS Diode;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

4. Investigation of Two High-Temperature Bipolar Phenomena and Characteristics of 1.2-kV SiC Power Diodes for High-Temperature Applications;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-02

5. Scalable Test System for Long Term Reliability Assessment of SiC MOSFET Stability in Extreme dV/dt Stress Conditions;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

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