Limitations of LDD types of structures in deep-submicrometer MOS technology-Reference-Cited by-同舟云学术

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Limitations of LDD types of structures in deep-submicrometer MOS technology

Published:1990-11 Issue:11 Volume:11 Page:517-519
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tasch A.F.,Shin H.,Bordelon T.J.,Maziar C.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/2300/00063018.pdf?arnumber=63018

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chapter 4 Hot carrier injections in SIO2 and related instabilities in submicrometer mosfets;New Insulators, Devices and Radiation Effects;1999

2. A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's;IEEE Transactions on Electron Devices;1998-06

3. Study of hot electron degradation in submicrometer gate length MOS transistor fabricated with selectively doped substrate engineering;Microelectronics Reliability;1995-05

4. Effects of profile doped elevated source/drain structures on deep-submicron MOSFETs;Solid-State Electronics;1995-03

5. Simulation, fabrication and characterization of a novel P-I-N-drain MOSFET structure for hot carrier suppression;IEEE Transactions on Electron Devices;1995

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