Effects of profile doped elevated source/drain structures on deep-submicron MOSFETs-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effects of profile doped elevated source/drain structures on deep-submicron MOSFETs

Published:1995-03 Issue:3 Volume:38 Page:573-579
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Tian H.,Kim K.W.,Hauser J.R.,Masnari N.A.,Littlejohn M.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. VLSI Symp. Tech. Dig.;Tasch,1990

2. MOSFET drain engineering analysis for deep-submicrometer dimensions: a new structural approach

3. A novel elevated MOSFET source/drain structure

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A new fabrication method for elevated source/drain junctionless transistors;Journal of Physics D: Applied Physics;2013-03-27

2. Strained-Si nMOSFET with a raised source/drain structure;Semiconductor Science and Technology;2008-12-15

3. Bibliography;Silicon-Germanium Strained Layers and Heterostructures;2003

4. Low Schottky barrier source/drain for advanced MOS architecture: device design and material considerations;Solid-State Electronics;2002-07

5. Low parasitic resistance contacts for scaled ULSI devices;Thin Solid Films;1998-11

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP