Investigation on the Degradation Mechanism of A1GaN/GaN HEMTs Under the Effect of Microwave Pulses at Different Powers-Reference-Cited by-同舟云学术

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Investigation on the Degradation Mechanism of A1GaN/GaN HEMTs Under the Effect of Microwave Pulses at Different Powers

Published:2023-10-12 Issue: Volume: Page:1-5
ISSN:
Container-title:2023 Global Reliability and Prognostics and Health Management Conference (PHM-Hangzhou)
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Author:

Yang Fanfeng¹,Liao Min¹,Zeng Binjian¹,Yang Peiliang²,Chen Yiqiang²

Affiliation:

1. College of Materials Science and Engineering, Xiangtan University,Xiangtan,China

2. The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology,The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,Guangzhou,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10482420/10482375/10482775.pdf?arnumber=10482775

Reference20 articles.

1. DARPA's Nitride Electronic NeXt Generation Technology Program

2. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

3. Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

4. A review of GaN HEMT broadband power amplifiers

5. Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

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