DARPA's Nitride Electronic NeXt Generation Technology Program-Reference-Cited by-同舟云学术

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DARPA's Nitride Electronic NeXt Generation Technology Program

Published:2010-10 Issue: Volume: Page:
ISSN:
Container-title:2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
language:
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Author:

Albrecht John D.,Chang Tsu-Hsi,Kane Avinash S.,Rosker Mark J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5618478/5619580/05619581.pdf?arnumber=5619581

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation on the Degradation Mechanism of A1GaN/GaN HEMTs Under the Effect of Microwave Pulses at Different Powers;2023 Global Reliability and Prognostics and Health Management Conference (PHM-Hangzhou);2023-10-12

2. High Thermal Conductivity of Submicrometer Aluminum Nitride Thin Films Sputter-Deposited at Low Temperature;ACS Nano;2023-10-05

3. A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap;Micromachines;2023-03-29

4. Emerging Millimeter-Wave Device Technology - Next Generation GaN and Beyond;2022 IEEE/MTT-S International Microwave Symposium - IMS 2022;2022-06-19

5. Embedded Cooling for Wide Bandgap Power Amplifiers: A Review;Journal of Electronic Packaging;2019-07-30

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