Emerging Millimeter-Wave Device Technology - Next Generation GaN and Beyond
Author:
Affiliation:
1. Defense Advanced Research Projects Agency,Arlington,VA,USA,22203
2. Advanced Research Consultants,Rockville,MD,USA,20852
3. HetInTec Corp.,Rockville,MD,USA,20850
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9865233/9865240/09865442.pdf?arnumber=9865442
Reference11 articles.
1. W-band GaN power amplifier MMICs;brown;2011 IEEE MTT-S International Microwave Symposium,0
2. Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications
3. High Power Ka-Band SLCFET Amplifier;novak;GOMACTech 2020’,2021
4. Compound Semicnductor Technology for Modern RF Modules: Status and Future Directions;green;CS Mantech,2015
5. Advanced Ultra-linear mmW GaN Transistors SOA Linearity and Efficiency;moon;GOMACTech 2021,0
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Heterogeneously-Integrated Gallium Nitride and Indium Phosphide Devices for Ka-band Amplifiers;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16
2. On-Chip Sensors for Temperature Monitoring of Packaged GaN MMICs;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024-05
3. AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz;IEEE Electron Device Letters;2023-01
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