High-performance antimonide-based heterostructure backward diodes for millimeter-wave detection-Reference-Cited by-同舟云学术

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High-performance antimonide-based heterostructure backward diodes for millimeter-wave detection

Published:2002-10 Issue:10 Volume:23 Page:585-587
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Fay P.,Schulman J.N.,Thomas S.,Chow D.H.,Boegeman Y.K.,Holabird K.S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/22270/01039175.pdf?arnumber=1039175

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III–V nanowire backward diodes with high sensitivity above 1 MV W−1 for low-power microwave energy harvesting;Japanese Journal of Applied Physics;2021-02-09

2. Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias;AIP Advances;2020-08-01

3. Achieving a high breakdown voltage for GaAsSb-based backward diodes using the carrier depletion effect originating from nanowires;Japanese Journal of Applied Physics;2020-02-06

4. Type-II p-GaAsSb/n-InAs multi-nanowire backward diodes for rectification of low-power RF signals under a zero-bias condition;Applied Physics Express;2019-09-02

5. Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio;ACS Applied Materials & Interfaces;2018-02-02

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