Type-II p-GaAsSb/n-InAs multi-nanowire backward diodes for rectification of low-power RF signals under a zero-bias condition
Author:
Funder
Core Research for Evolutional Science and Technology
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab3cc6/pdf
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1. Energy Harvesting for Autonomous Wireless Sensor Networks
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1. Review on GaAsSb nanowire potentials for future 1D heterostructures: Properties and applications;Materials Today Communications;2021-09
2. III–V nanowire backward diodes with high sensitivity above 1 MV W−1 for low-power microwave energy harvesting;Japanese Journal of Applied Physics;2021-02-09
3. Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias;AIP Advances;2020-08-01
4. Achieving a high breakdown voltage for GaAsSb-based backward diodes using the carrier depletion effect originating from nanowires;Japanese Journal of Applied Physics;2020-02-06
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