Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio
Author:
Affiliation:
1. Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
Funder
Indian Institute of Science
Nano Mission Council, Department of Science and Technology
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.7b18242
Reference57 articles.
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4. Fundamentals of lateral and vertical heterojunctions of atomically thin materials
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