Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics-Reference-Cited by-同舟云学术

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

Published:2024 Issue:1 Volume:16 Page:14-43
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Elahi Ehsan¹^ORCID,Ahmad Muneeb²,Dahshan A.³,Rabeel Muhammad²,Saleem Sidra⁴,Nguyen Van Huy⁵,Hegazy H. H.³⁶,Aftab Sikandar⁷^ORCID

Affiliation:

1. Department of Physics & Astronomy and Graphene Research Institute, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea

2. Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea

3. Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia

4. Division of Science Education, Department of Energy Storage/Conversion Engineering for Graduate School, Jeonbuk National University, Jeonju, Jeonbuk 54896, Republic of Korea

5. Department of Nanotechnology and Advanced Materials Engineering, and H.M.C., Sejong University, Seoul 05006, South Korea

6. Research Centre for Advanced Materials Science (RCAMS), King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia

7. Department of Intelligent Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul, 05006 South Korea

Abstract

Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical characteristics have attracted significant interest from the scientific and industrial worlds in the years following Moore's law.

Funder

Deanship of Scientific Research, King Saud University

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D3NR04547A

Reference315 articles.

1. Single-layer MoS2 transistors

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor