Hot-Carrier Degradation in Power LDMOS: Drain Bias Dependence and Lifetime Evaluation-Reference-Cited by-同舟云学术

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Hot-Carrier Degradation in Power LDMOS: Drain Bias Dependence and Lifetime Evaluation

Published:2018-11 Issue:11 Volume:65 Page:5195-5198
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tallarico Andrea Natale^ORCID,Reggiani Susanna^ORCID,Depetro Riccardo^ORCID,Manzini Stefano,Torti Andrea Mario,Croce Giuseppe^ORCID,Sangiorgi Enrico^ORCID,Fiegna Claudio

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8501619/08458210.pdf?arnumber=8458210

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel MOSFET with lateral–vertical charge coupling for extremely low C _gd;Semiconductor Science and Technology;2024-04-18

2. Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage;IEEE Transactions on Device and Materials Reliability;2024-03

3. DC to AC analysis of HC vs. BTI damage in N-EDMOS used in single photon avalanche diode cell;Microelectronics Reliability;2023-11

4. Abnormal Two-Stage Degradation Under Hot Carrier Injection With Lateral Double-Diffused MOS With 0.13-μm Bipolar-CMOS-DMOS Technology;IEEE Transactions on Electron Devices;2023-07

5. Impact Analysis of Off-State Avalanche-Breakdown Stress on 650 V-Class Superjunction MOSFET;IEEE Transactions on Electron Devices;2023-07

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