Gate Oxide Degradation Condition Monitoring Technique for High-Frequency Applications of Silicon Carbide Power MOSFETs-Reference-Cited by-同舟云学术

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Gate Oxide Degradation Condition Monitoring Technique for High-Frequency Applications of Silicon Carbide Power MOSFETs

Published:2023-01 Issue:1 Volume:38 Page:1079-1091
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Naghibi Javad¹^ORCID,Mohsenzade Sadegh²^ORCID,Mehran Kamyar¹^ORCID,Foster Martin P.³^ORCID

Affiliation:

1. School of Electronics Engineering and Computer Science, Queen Mary University of London, London, U.K.

2. Electrical Engineering Department, K.N. Toosi University of Technology, Tehran, Iran

3. Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield, U.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9911205/09855221.pdf?arnumber=9855221

Reference28 articles.

1. Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters

2. Effect of Gate-Oxide Degradation on Electrical Parameters of Silicon Carbide MOSFETs

3. Data-Driven Approach for Fault Prognosis of SiC MOSFETs

4. Online Junction Temperature Estimation of SiC Power mosfets Through On-State Voltage Mapping

5. An Online Failure Assessment Approach for SiC-based MOSFET Power Modules Using Iterative Condition Monitoring Technique

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Concept of Enabling Over-Current Capability of Silicon-Carbide-Based Power Converters with Gate Voltage Augmentation;Energies;2024-08-28

2. Study on Characteristics and UIS of Hexagonal Planar SiC VDMOSFETs With Varied JFET Width;IEEE Transactions on Device and Materials Reliability;2024-06

3. An Online Gate Oxide Degradation Monitoring Method for SiC Mosfets Based on Turn-On Gate Voltage Filtering;IEEE Transactions on Power Electronics;2024-05

4. Real‐time monitoring and ageing detection algorithm design with application on SiC‐based automotive power drive system;IET Power Electronics;2024-03-15

5. Online Monitoring Method for SiC MOSFET Gate Oxide Degradation Based on Gate Voltage Filtering;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

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